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Bottom cell growth aspects for triple junction InGaP/(In)GaAs/Ge solar cells
Author(s) -
Timò G.,
Flores C.,
Campesato R.
Publication year - 2005
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200410483
Subject(s) - dopant , solar cell , triple junction , nucleation , materials science , optoelectronics , substrate (aquarium) , electrical resistivity and conductivity , germanium , layer (electronics) , nanotechnology , chemistry , doping , silicon , geology , electrical engineering , engineering , oceanography , organic chemistry
The paper discusses the problems of nucleation layer and substrate specification selection for a bottom Ge cell performance. GaAs/Ge, AlGaAs/Ge and InGaP/Ge heterojuctions have been compared showing how lattice matching and dopant interdiffusion control are key aspects for improving the Ge bottom cell photovoltaic response. The influence of substrates orientation, polarity and resistivity on the electrical performances of the bottom cells are presented. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)