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Growth aspects of AlGaAs/GaAs tunnel diodes for multijunction solar cells
Author(s) -
Timò G.,
Flores C.,
Campesato R.
Publication year - 2005
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200410482
Subject(s) - diode , tunnel diode , optoelectronics , materials science , solar cell , gallium arsenide , lattice (music) , thermal , photoluminescence , physics , thermodynamics , acoustics
Growth aspects related to AlGaAs/GaAs tunnel diodes for multijunction solar cell structures are presented. Test structures have been grown in order to show the correct way for checking the thermal resistance of tunnel diodes. AlGaAs:C lattice contraction as a function of carbon concentration and growth temperature has been studied by using XRD, Hall and Room temperature photoluminescence characterisation. The XRD experimental results have been successfully compared with the lattice contraction model reported by W.E Hoke et al. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)