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Development of InN metalorganic vapor phase epitaxy using in‐situ spectroscopic ellipsometry
Author(s) -
Drago M.,
Werner C.,
Pristovsek M.,
Pohl U. W.,
Richter W.
Publication year - 2005
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200410474
Subject(s) - sapphire , ellipsometry , in situ , epitaxy , analytical chemistry (journal) , metalorganic vapour phase epitaxy , nitrogen , chemical vapor deposition , chemistry , surface finish , layer (electronics) , atomic force microscopy , surface roughness , materials science , thin film , nanotechnology , optics , composite material , laser , physics , organic chemistry , chromatography
Metalorganic vapor phase epitaxy of InN layers on sapphire was studied in‐situ by spectroscopic ellipsometry (SE), ex‐situ atomic force microscopy and optical microscopy. Surface morphology has been largely improved by using nitrogen instead of hydrogen as carrier gas during sapphire nitridation. Using the sensitivity of in‐situ SE with respect to roughness we established a new growth procedure with low V/III ratio (10 4 ) at high temperature (580 °C) and growth rates as high as 350 nm/h, leading to improved electronic layer properties and allowing for growth of comparably thick layers. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)