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Optical anisotropy in GaSe
Author(s) -
Seyhan A.,
Karabulut O.,
Akįnoğlu B. G.,
Aslan B.,
Turan R.
Publication year - 2005
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200410452
Subject(s) - photoluminescence , anisotropy , exciton , fourier transform infrared spectroscopy , spectroscopy , fourier transform , spectral line , optics , materials science , chemistry , perpendicular , infrared , molecular physics , condensed matter physics , analytical chemistry (journal) , physics , geometry , mathematics , chromatography , quantum mechanics , astronomy
Optical anisotropy of the layer semiconductor GaSe has been studied by photoluminescence (PL) and Fourier Transform Infrared Spectroscopy (FTIR). The PL spectra are dominated by two closely positioned emission bands resulting from the free exciton and the bound exciton connected direct band edge of GaSe. Photoluminescence and transmission spectra of GaSe crystals have been measured for two cases in which the propagation vector k is perpendicular (k ⟂ c) and parallel to the c‐axis (k // c). Peak position of the PL emission band and the onset of the transmission have been found to be significantly different for these two cases. This observed anisotropy is related to anisotropic band structure and the selection rules for the optical absorption in layered GaSe. FTIR transmission spectrum is in good agreement with PL results. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)