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Optical studies of defects generated in neutron‐irradiated Cz‐Si during HP‐HT treatment
Author(s) -
Surma B.,
Misiuk A.,
Wnuk A.,
Londos C. A.,
Bukowski A.
Publication year - 2005
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200410369
Subject(s) - hydrostatic pressure , irradiation , precipitation , oxygen , silicon , neutron , dislocation , materials science , hydrostatic equilibrium , neutron irradiation , chemistry , analytical chemistry (journal) , hydrostatic stress , radiochemistry , nuclear chemistry , crystallography , metallurgy , nuclear physics , thermodynamics , physics , organic chemistry , quantum mechanics , meteorology , chromatography , finite element method
Neutron‐irradiated Czochralski grown silicon subjected to heat treatment (HT) at 350 °C and 1000 °C under enhanced hydrostatic pressure (HP) was studied in this work. It has been shown that external hydrostatic pressure enhances the creation of VO 2 defects in neutron irradiated silicon subjected to the HP ‐ HT treatment at 350 °C. Enhanced formation of platelet‐like oxygen precipitates was found in the samples treated at 1000 °C under 1.1 GPa. This effect was more pronounced in the samples with VO 2 defects. Presented results seem to suggest that probably HP helps to transform VO 2 to some kind of defects or change alone VO 2 defects in the form that can act as an additional nucleus for an additional oxygen precipitation at 1000°C. No correlation between the plate‐like oxygen precipitates related absorption at 1225 cm ‐1 and dislocation‐related emission has been confirmed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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