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Investigation of semi‐insulating InP co‐doped with Ti and various acceptors for use in X‐ray detection
Author(s) -
Zdansky K.,
Pekarek L.,
Gorodynskyy V.,
Kozak H.
Publication year - 2005
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200410357
Subject(s) - electrical resistivity and conductivity , doping , materials science , hall effect , analytical chemistry (journal) , annealing (glass) , wafer , condensed matter physics , temperature coefficient , mineralogy , chemistry , optoelectronics , metallurgy , composite material , electrical engineering , physics , chromatography , engineering
Abstract Semi‐insulating InP single crystals co‐doped with Zn and Ti and co‐doped with Ti and Mn were grown by Czochralski technique. Wafers of these crystals were annealed for a long time at a high temperature and cooled slowly. The samples were characterized by temperature dependent resistivity and Hall coefficient measurements. The binding energies of Ti in semi‐insulating InP co‐doped with Ti and Zn and co‐doped with Ti and Mn were found to differ which shows that Ti may occupy different sites in InP. The curves of Hall coefficient vs. reciprocal temperature deviate from straight lines at low temperatures due to electron and hole mixed conductance. The value of resistivity of the annealed semi‐insulating InP co‐doped with Ti and Mn reaches high resistivity at a reduced temperature easily achievable by thermo‐electric devices which could make this material useable in X‐ray detection. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)