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Recent developments in modelling of liquid phase electroepitaxy under applied magnetic field
Author(s) -
Dost S.,
Sheibani H.,
Liu Y. C.,
Lent B.
Publication year - 2005
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200410344
Subject(s) - magnetic field , phase (matter) , mixing (physics) , condensed matter physics , rotating magnetic field , materials science , field (mathematics) , intensity (physics) , field intensity , growth rate , magnetostatics , convection , thermodynamics , chemistry , nuclear magnetic resonance , optics , physics , mathematics , geometry , organic chemistry , quantum mechanics , pure mathematics
Growth of single crystals under magnetic field is of interest for suppressing the adverse effect of natural convection and for better mixing in the liquid solution, which are the favorable conditions for prolonged growth and high quality crystals. In this short review article, recent developments in the modelling of electroepitaxy under magnetic field are presented. An application is given for the liquid phase electroepitaxial growth of GaAs bulk single crystals under a static magnetic field. Experimental results, that have shown that the growth rate under an applied static magnetic field is proportional to the applied magnetic field, and increases with the field intensity level, are predicted from the present model. The model also predicts growth interface shapes accurately. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)