Silicon crystal growth from the melt: Analysis from atomic and macro scales | Zendy

Kakimoto K. | Zendy; Liu L. | Zendy; Kitashima T. | Zendy; Murakawa A. | Zendy; Hashimoto Y. | Zendy

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Silicon crystal growth from the melt: Analysis from atomic and macro scales

Author(s) -

Kakimoto K.,

Liu L.,

Kitashima T.,

Murakawa A.,

Hashimoto Y.

Publication year - 2005

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.200410343

Subject(s) - impurity , silicon , thermal conductivity , boron , crystal (programming language) , phonon , materials science , conductivity , chemical physics , chemistry , analytical chemistry (journal) , condensed matter physics , metallurgy , composite material , chromatography , physics , organic chemistry , computer science , programming language

The effect of impurity concentration on thermal conductivity of natural and isotope silicon by using equilibrium molecular dynamics simulation is investigated. It was found that the concentrations of the impurities such as boron, phosphor and arsene play an important role in the propagation of phonons in silicon crystals. It was also clarified that a mass difference of impurities and host crystals results in degradation of thermal conductivity of silicon. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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