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Raman spectroscopic and X‐ray investigation of stressed states in diamond‐like carbon films
Author(s) -
Krawietz R.,
Kämpfe B.,
Auerswald E.,
Brücher M.
Publication year - 2005
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200410317
Subject(s) - raman spectroscopy , silicon , crystallite , materials science , substrate (aquarium) , diffraction , stress (linguistics) , diamond , carbon fibers , synthetic diamond , analytical chemistry (journal) , carbon film , x ray crystallography , diamond like carbon , characterization (materials science) , thin film , nanotechnology , chemistry , optics , composite material , optoelectronics , metallurgy , chromatography , linguistics , oceanography , physics , philosophy , composite number , geology
The non‐destructive characterization of intrinsic stress is very important to evaluate the reliability of devices based on diamond‐like carbon (DLC) films. Whereas the only requirement for the X‐ray diffraction method is a crystalline state of specimen, Raman spectroscopic stress analysis is restricted to materials showing intensive and sharp Raman peaks. On the other hand, Raman spectroscopy offers the possibility to measure stress profiles with lateral resolution of about 1 micron. The results of stress measurements in DLC films using both X‐ray diffraction and Raman spectroscopy are found in very good correspondence. Mean stress in carbon films consisting of very small crystallites on silicon substrates has been determined by measuring and fitting the stress profiles in the substrate near artificial vertical film edges. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)