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Floating zone growth of CuO under elevated oxygen pressure and its relevance for the crystal growth of cuprates
Author(s) -
Behr G.,
Löser W.,
Apostu M.O.,
Gruner W.,
Hücker M.,
Schramm L.,
Souptel D.,
Teresiak A.,
Werner J.
Publication year - 2005
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200410303
Subject(s) - partial pressure , oxygen pressure , cuprate , oxygen , crystal growth , phase diagram , partial melting , melting temperature , phase (matter) , analytical chemistry (journal) , crystal (programming language) , chemistry , mineralogy , materials science , thermodynamics , crystallography , geology , mantle (geology) , composite material , chromatography , doping , organic chemistry , geochemistry , physics , optoelectronics , computer science , programming language
CuO single crystals have been grown from the melt by a floating zone method with optical heating at elevated oxygen pressures 3.5 to 5.5 MPa and growth rates as high as 10 mm/h. Melting experiments and recalculated Cu‐O phase diagram data show that CuO melts incongruently. The melting temperature increases and the concentration difference between the melt and the CuO phase decreases for rising oxygen partial pressure. Accordingly, increasing the oxygen partial pressure improves the growth process by reducing both the significant oxygen loss during melting as well as the composition difference at the growth interface. The results on CuO provide important information for the crystal growth of more complex cuprates. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)