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Growth of lead bromide polycrystalline films
Author(s) -
Giles M.,
Cuña A.,
Sasen N.,
Llorente M.,
Fornaro L.
Publication year - 2004
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200410275
Subject(s) - crystallite , scanning electron microscope , materials science , indium tin oxide , substrate (aquarium) , analytical chemistry (journal) , electrical resistivity and conductivity , grain size , texture (cosmology) , chemical vapor deposition , thin film , mineralogy , composite material , chemistry , nanotechnology , metallurgy , oceanography , image (mathematics) , engineering , chromatography , artificial intelligence , geology , computer science , electrical engineering
Lead bromide polycrystalline films were grown by the physical vapor deposition method (PVD). Glass 1″x1″ in size, uncoated, and coated with Indium Tin Oxide (ITO), was used as substrate and rear contact. The starting material was evaporated at temperatures from 395°C to 530°C under high vacuum atmosphere (6 x 10 ‐3 Pa) and during 8 days. The substrate temperature was prefixed from 190°C to 220°C. Film thickness yielded values from 40 to 90 μm. Optical microscopy and scanning electron microscopy (SEM) were performed on the films. Grain size resulted to be from 1.0 to 3.5 μm. SEM and X‐ray diffraction indicate that films grow with a preferred orientation with the (0 0 l ) planes parallel to the substrate. The Texture Coefficient (TC) related to the plane (0 0 6) was 7.3. Resistivity values in the order of 10 12 Ωcm were obtained for the oriented samples, but a strong polarization indicates severe charge transport problems in the films. Film properties were correlated with the growth temperature and with previous results for films of other halides. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)