Premium
Properties of Hg 1‐x Cd x Te epitaxial films grown on (211)CdTe and (211)CdZnTe
Author(s) -
Di Stefano M. C.,
Heredia E.,
Gilabert U.,
Trigubó A. B.
Publication year - 2004
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200410271
Subject(s) - epitaxy , cadmium telluride photovoltaics , isothermal process , materials science , isotropic etching , etching (microfabrication) , hall effect , crystallography , x ray crystallography , diffraction , analytical chemistry (journal) , chemistry , optoelectronics , nanotechnology , electrical resistivity and conductivity , optics , physics , engineering , layer (electronics) , chromatography , electrical engineering , thermodynamics
Hg 1‐x Cd x Te (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96 Zn 0.04 Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and x ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)