Premium
Infrared photoluminescence from TlGaS 2 layered single crystals
Author(s) -
Yuksek N. S.,
Gasanly N. M.,
Aydinli A.,
Ozkan H.,
Acikgoz M.
Publication year - 2004
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200310256
Subject(s) - photoluminescence , wavelength , excitation , broad band , emission spectrum , quenching (fluorescence) , atmospheric temperature range , intensity (physics) , spectral line , materials science , laser , range (aeronautics) , band diagram , molecular physics , band gap , chemistry , analytical chemistry (journal) , optics , optoelectronics , fluorescence , physics , quantum mechanics , astronomy , meteorology , composite material , chromatography
Photolimuniscence (PL) spectra of TlGaS 2 layered crystals were studied in the wavelength region 500‐1400 nm and in the temperature range 15‐115 K. We observed three broad bands centered at 568 nm (A‐band), 718 nm (B‐band) and 1102 nm (C‐band) in the PL spectrum. The observed bands have half‐widths of 0.221, 0.258 and 0.067 eV for A‐, B‐, and C‐bands, respectively. The increase of the emission band half‐width, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature are explained using the configuration coordinate model. We have also studied the variations of emission band intensity versus excitation laser intensity in the range from 0.4 to 19.5 W cm ‐2 . The proposed energy‐level diagram allows us to interpret the recombination processes in TlGaS 2 crystals. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)