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Stable and transient color centers in Gd 3 Ga 5 O 12 crystals
Author(s) -
Matkovskii A.,
Potera P.,
Sugak D.,
Grigorjeva L.,
Millers D.,
Pankratov V.,
Suchocki A.
Publication year - 2004
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200310254
Subject(s) - irradiation , fluence , dopant , crystal (programming language) , transient (computer programming) , materials science , ion , radiation , absorption (acoustics) , cathode ray , electron beam processing , analytical chemistry (journal) , optics , electron , chemistry , optoelectronics , doping , physics , nuclear physics , composite material , organic chemistry , chromatography , computer science , programming language , operating system
The work is devoted to investigation of stable color centers (CC) that are created in Gd 3 Ga 5 O 12 (GGG) crystals under irradiation with γ‐quanta ( E = 1.25 MeV, D = 10 5 Gy ) as well as transient CC created in the crystals under irradiation with pulsed electron beam ( E = 0.25 MeV, pulse duration 10 ns, fluence 10 12 cm ‐2 , time interval of registration 0‐500 ns). On the basis of the performed study of optical absorption spectra of the as‐grown and irradiated crystals it was established the correlation between a defect subsystem of as‐grown crystals and a type of CC induced by radiation in the crystals. The role of Ca 2+ dopant ions in the processes of CC formation is examined. Models of the stable and transient CC are proposed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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