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Growth of trivalent ions doped PbWO 4 crystals and their scintillation properties
Author(s) -
Yang C. H.,
Li J. L.,
Wang B.
Publication year - 2004
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200310185
Subject(s) - doping , ion , luminescence , scintillation , transmittance , materials science , yield (engineering) , analytical chemistry (journal) , radiation resistance , chemistry , crystallography , radiation , mineralogy , optics , optoelectronics , metallurgy , physics , chromatography , organic chemistry , detector
Abstract Undoped and series of trivalent ions(including La, Y, Gd and Tb) doped PWO crystals were grown from 5N raw materials by using Czochralski technique. Trivalent ions doping improved the transmittance, fast components of luminescence and radiation damage resistance for compensating structure defects. Corresponding, the fraction of light yield at shorter collecting time was increased. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)