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Pressure assisted evolution of defects in silicon
Author(s) -
Londos C. A.,
Potsidi M. S.,
BakMisiuk J.,
Misiuk A.,
Emtsev V. V.
Publication year - 2003
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200310136
Subject(s) - hydrostatic pressure , annealing (glass) , silicon , oxygen , crystallographic defect , oxygen pressure , chemistry , activation energy , hydrostatic equilibrium , high pressure , partial pressure , irradiation , materials science , crystallography , thermodynamics , composite material , metallurgy , physics , organic chemistry , quantum mechanics , nuclear physics
The effect of enhanced hydrostatic pressure following heat treatment on the evolution of point defects in neutron‐irradiated Czochralski‐grown silicon is investigated using infrared spectroscopy. The behavior of oxygen‐related defects, particularly of the VO and the VO 2 centers, is mainly studied using samples subjected to heat treatment under hydrostatic pressure. It is observed that (1) pressure accelerates the annealing process of the VO defects and enhances the growth of the VO 2 complexes and (2) the VO 2 concentration is larger than expected from the corresponding decay of the VO defects. The faster decay of the VO defects is attributed to a pressure‐induced decrease of their migration energy. The larger VO 2 concentration is also discussed. One possible explanation is that pressure stimulates an additional mechanism for the formation of the VO 2 defects, which involves the reaction of oxygen dimers with vacancies. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)