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Studies on zirconium nitride films deposited by reactive magnetron sputtering
Author(s) -
Bhuvaneswari H. B.,
Nithiya Priya I.,
Chandramani R.,
Rajagopal Reddy V.,
Mohan Rao G.
Publication year - 2003
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200310134
Subject(s) - zirconium nitride , zirconium , materials science , sputtering , nitride , electrical resistivity and conductivity , sputter deposition , molar absorptivity , refractive index , partial pressure , analytical chemistry (journal) , thin film , nitrogen , cavity magnetron , chemical engineering , inorganic chemistry , chemistry , metallurgy , composite material , nanotechnology , optoelectronics , layer (electronics) , titanium nitride , optics , oxygen , organic chemistry , physics , electrical engineering , engineering
Abstract This paper deals with the preparation of Zirconium Nitride films by DC reactive magnetron sputtering. Films were deposited on silicon substrates at room temperature. Nitrogen partial pressure was varied from 4 × 10 −5 to 10 × 10 −5 m bar and the effect on the structural, electrical, optical properties of the films was systematically studied. The films formed at a nitrogen pressure of 6 × 10 −5 mbar showed low electrical resistivity of 1.726 × 10 −3 Ω.cm. The deposited films were found to be crystalline with refractive index and extinction coefficient 1.95 and 0.4352 respectively. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)