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A comparative study for profiling ultrathin boron layers in Si
Author(s) -
Basaran E.,
Addemir O.,
Aslan M. H.,
Parker E. H. C.
Publication year - 2003
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200310132
Subject(s) - boron , spreading resistance profiling , secondary ion mass spectrometry , analytical chemistry (journal) , molecular beam epitaxy , capacitance , epitaxy , profiling (computer programming) , chemistry , materials science , electrochemistry , mass spectrometry , optoelectronics , nanotechnology , layer (electronics) , silicon , electrode , chromatography , organic chemistry , computer science , operating system
The carrier concentration‐depth profiles of ultrathin boron layers in Si, grown by molecular beam epitaxy, are determined by the electrochemical capacitance‐voltage (ECV) and the spreading resistance (SR) profiling techniques. Secondary ion mass spectrometry (SIMS) is employed as a base for the comparison of the results. It has been shown that, under carefully chosen conditions, both ECV and SR techniques are able to resolve ultrathin layers including a delta layer, however ECV match better with the results of SIMS than that of SR. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)