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Studies on the growth and defects of La 3 Ga 5 SiO 14 (LGS) crystals
Author(s) -
Wang Z. M.,
Yuan D. R.,
Xu D.,
Lv M. K.,
Pan L. H.
Publication year - 2003
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200310123
Subject(s) - crucible (geodemography) , transmission electron microscopy , crystallography , materials science , grain boundary , crystal growth , piezoelectricity , crystal (programming language) , iridium , mineralogy , chemistry , composite material , nanotechnology , microstructure , catalysis , computational chemistry , biochemistry , computer science , programming language
Abstract New and high quality piezoelectric crystals La 3 Ga 5 SiO 14 (LGS) grown by the Czochralski method in a Platinum or Iridium crucible are reported in this paper. The growth defects in the LGS crystals were investigated by Transmission electron microscopy (TEM). It was found that cracks, inclusions, grain boundary and thermal stress in the LGS crystals. Their formation mechanisms and the method of eliminating these defects are discussed. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)