Premium
Triple axis diffractometric investigations of the microstructure of thin Al x Ga 1‐x N epitaxial films
Author(s) -
ZielinskaRohozinska E.,
Kowalska M.,
Pakuła K.
Publication year - 2003
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200310119
Subject(s) - reciprocal lattice , sapphire , diffraction , epitaxy , metalorganic vapour phase epitaxy , materials science , microstructure , optics , lattice (music) , doping , chemical vapor deposition , thin film , crystallography , analytical chemistry (journal) , layer (electronics) , optoelectronics , chemistry , laser , composite material , physics , nanotechnology , chromatography , acoustics
Al x Ga 1‐x N/GaN (Si doped or undoped) with the Al content in the composition range of 0.046 ≤ x ≤ 0.164 grown on the c sapphire face by atmospheric pressure MOCVD method were studied by high resolution x‐ray diffraction including symmetrical and asymmetrical ω/2θ scans and reciprocal space maps. A high sensitivity to small inhomogeneities of the layer thickness and lattice mismatch between AlGaN and GaN is reported, recognised as changes in the interference pattern of the diffraction peak observed across the sample. They are very well correlated with optical properties derived from independent photoreflectivity measurements. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)