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Melt‐crucible wetting behavior in semiconductor melt growth systems
Author(s) -
Cröll A.,
Lantzsch R.,
Kitanov S.,
Salk N.,
Szofran F. R.,
Tegetmeier A.
Publication year - 2003
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200310081
Subject(s) - wetting , quartz , materials science , contact angle , crucible (geodemography) , surface roughness , fused quartz , surface tension , substrate (aquarium) , surface finish , semiconductor , crystal (programming language) , composite material , mineralogy , chemistry , optoelectronics , thermodynamics , computational chemistry , physics , oceanography , computer science , programming language , geology
The wetting angles of several semiconductor‐substrate combinations that are of practical importance for crystal growth have been measured: Ga‐GaSb‐Sb on fused quartz; Ge on fused quartz and carbon‐based substrates, each with a selection of roughness; Si on fused quartz plates and on plates coated with fused quartz, Si 3 N 4 , and BN powders. The Ga‐GaSb‐Sb system showed no significant dependence of the wetting angle on the composition despite a large composition dependence of the surface tension. For Ge, the effect of the roughness on the angle could initially be seen on both types of substrates, but for the fused quartz substrates an equilibrium value independent of the surface treatment was reached after several hours of contact time. For Si, total wetting was found for Si 3 N 4 powders. A reduction of the angle over time was found for both fused quartz and BN powders, with the BN powder showing the highest angle at 150‐120°.