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Macrosegregation in the growth of doped III‐V‐semiconductors from the solution
Author(s) -
Danilewsky A. N.,
Meinhardt J.
Publication year - 2003
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200310074
Subject(s) - doping , diffusion , convection , semiconductor , materials science , boundary value problem , crystal growth , thermodynamics , mechanics , chemistry , physics , optoelectronics , quantum mechanics
In case of the solution growth of S‐doped InP bulk crystals from the In solution the solutal convection plays the dominant role for the transport of matter even under microgravity conditions. A measure for the strength of convection is the macrosegregation. For various boundary conditions the axial segregation is described with modified classical segregation models. The measured and calculated physical parameters such as effective distribution and diffusion coefficients respectively allow a consistent formulation of macro‐ and microsegragtion.