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Optical properties of an In 0.22 Ga 0.78 Sb/GaSb single quantum well
Author(s) -
Kudrawiec R.,
Bryja L.,
Sęk G.,
Ryczko K.,
Misiewicz J.,
Forchel A.
Publication year - 2003
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200310050
Subject(s) - photoluminescence , excitation , excited state , quantum well , recombination , envelope (radar) , atomic physics , exciton , chemistry , range (aeronautics) , atmospheric temperature range , condensed matter physics , molecular physics , materials science , physics , optoelectronics , laser , optics , telecommunications , biochemistry , radar , quantum mechanics , meteorology , computer science , composite material , gene
Optical properties of an In 0.22 Ga 0.78 Sb/GaSb single quantum well (SQW) have been investigated by photoluminescence (PL) and photoreflectance (PR). Two electron and heavy hole confined states, which had been expected from envelope function calculations, have been detected experimentally. Besides two allowed transitions (1HH‐1C and 2HH‐2C) also forbidden one (1HH‐2C) has been observed in PR. In PL experiment, which had been performed in broad excitation power (EP) range at different temperatures, the state filling effect has been investigated. At 10 K with the increase of EP density to 2 W/cm 2 a linear dependence of integrated PL intensity has been observed. The character of the PL emission is excitonic and does not change with the increase of EP in that excitation range. Above the excitation density of 2 W/cm 2 the in‐plane heating of the quantum well carriers occurs. With the increase of temperature the nature of recombination process changes from excitonic to free‐carrier recombination type. Above 60 K only the free‐carrier recombination take place and for high excitation power an emission from the excited state (2HH‐2C) emerges.