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Oxygen agglomeration and formation of oxygen‐related thermal donors in heat‐treated silicon
Author(s) -
Emtsev V. V.,
Ammerlaan C. A. J.,
Emtsev V. V.,
Oganesyan G. A.,
Misiuk A.,
Surma B.,
Bukowski A.,
Londos C. A.,
Potsidi M. S.
Publication year - 2003
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200310049
Subject(s) - oxygen , thermal , economies of agglomeration , silicon , hydrostatic pressure , materials science , atmospheric pressure , hydrostatic equilibrium , chemistry , thermodynamics , composite material , chemical engineering , metallurgy , organic chemistry , physics , oceanography , quantum mechanics , engineering , geology
The characteristic features of production processes of thermal donors in Czochralski grown silicon heat treated at T =450°C under hydrostatic pressures of about 1 GPa are studied. Two families of oxygen‐related donors are formed under compressive stress. The first one is the well‐known thermal double donors whose production rate is increased by a factor of five as compared with that observed at atmospheric pressure. Along with them, new thermal donors with similar energy states are also produced. This family was found to be a dominant contributor to the thermal donors formed under compressive stress. The features of formation processes of both kinds of thermal donors are briefly discussed.