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Hydrogen implantation effect on optical properties of GaAs doping superlattices
Author(s) -
Kunert H. W.,
Dale D.,
Hayes M.,
Malherbe J.,
Konko V. K.,
Barnas J.
Publication year - 2003
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200310042
Subject(s) - superlattice , photoluminescence , doping , materials science , spectroscopy , raman spectroscopy , raman scattering , hydrogen , optoelectronics , condensed matter physics , analytical chemistry (journal) , optics , chemistry , physics , organic chemistry , quantum mechanics , chromatography
Experimental results on the response of GaAs doping superlattices to 1 MeV hydrogen implantation at the doses of 5×10 16 , 1×10 17 , and 5×10 17 cm ‐2 are presented. The samples were studied by means of photoluminescence and inelastic light scattering spectroscopy. Several new optically stable transitions above the effective energy band were observed. Structural changes were monitored by Raman spectroscopy. Possible origin of the new transitions is discussed. An attempt is also made to determine character of the tunable behavior of the parameters in as‐grown and treated superlattices.