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Study of surface morphology of electrochemically etched n‐Si (111) electrodes at different anodic potentials
Author(s) -
Jakubowicz J.
Publication year - 2003
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200310037
Subject(s) - electropolishing , silicon , etching (microfabrication) , electrode , porous silicon , materials science , oscillation (cell signaling) , morphology (biology) , anode , oxide , dissolution , surface roughness , surface finish , electrochemistry , analytical chemistry (journal) , anodizing , nanotechnology , chemistry , optoelectronics , composite material , metallurgy , layer (electronics) , electrolyte , aluminium , biochemistry , chromatography , biology , genetics
Abstract Changes of n‐Si (111) silicon surface morphology after anodisation at different voltage conditions in dilute NH 4 F solutions were studied by AFM technique. The electrochemical etching was done with respect to current‐voltage ( I‐V ) characteristics. The Si surface was investigated at increasing and constant voltage conditions. The porous silicon was formed at potentials slightly anodic from the rest potential (from ‐0.6 V to 0.02 V). On the other hand silicon oxide formation and electropolishing occurs at higher anodic potentials. The sustained current oscillations take place in the Si electrode, at 6 V potential in dilute NH 4 F solution. The nature of oscillations was attributed to cyclic silicon oxide formation and its dissolution. The surface undergoes from smooth (before oscillation peak) to rough (little before top of the peak) during oscillation peak, and finally transforms to smooth at the bottom of the peak. It was confirmed by the roughness parameter.