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Investigation of one‐dimensionally disordered structures of A II B VI crystals by Monte Carlo technique III. 4H structure with different kinds of stacking faults
Author(s) -
Gosk J. B.
Publication year - 2003
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200310019
Subject(s) - stacking , monte carlo method , diffraction , lattice (music) , reciprocal lattice , crystallography , stacking fault , materials science , condensed matter physics , physics , molecular physics , statistical physics , chemistry , mathematics , optics , nuclear magnetic resonance , statistics , acoustics
To investigate one‐dimensionally disordered (ODD) structures in close packed (cp) crystals, the Monte Carlo computer simulation technique has been applied. Calculations of diffraction intensity distributions along the 10.L reciprocal lattice row from 4H structure with four different kinds of stacking faults (SFs): growth, deformation, layer displacement and extrinsic fault are presented. In particular, using simple frequency function of fault to fault distances, both random and non‐random distributions of SFs are considered. Distinctive features of the diffraction patterns corresponding to the chosen examples of transformations from the parent 4H structure into another small‐period polytypes are discussed in detail.