Premium
Growth and characterization of semiconducting cadmium selenide thin films
Author(s) -
Shreekanthan K. N.,
Rajendra B. V.,
Kasturi V. B.,
Shivakumar G. K.
Publication year - 2003
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.200310003
Subject(s) - cadmium selenide , thin film , materials science , deposition (geology) , stoichiometry , band gap , selenide , cadmium , electrical resistivity and conductivity , evaporation , characterization (materials science) , homogeneous , yield (engineering) , analytical chemistry (journal) , chemical engineering , selenium , nanotechnology , chemistry , optoelectronics , metallurgy , paleontology , physics , engineering , sediment , quantum dot , electrical engineering , biology , chromatography , thermodynamics
Semiconducting thin films of cadmium selenide have been grown by conventional thermal evaporation technique. The effect of various growth parameters like rate of deposition and deposition temperature has been studied in detail. Films deposited at room temperature are cadmium rich with segregated selenium globules. A deposition temperature of 453 K has been found to yield stoichiometric, homogeneous films. The films have been analysed for optical band gap and thermal activation energies. Films of low electrical resistivity have been obtained for possible applications.