Premium
Growth Kinetics of GaP Layers in Liquid Phase Electroeptiaxy (LPEE) from Limited and Unlimited Source
Author(s) -
Ivashchenko A. I.,
Kopanskaya F. Ya.,
Kuzmenko G. S.,
Molodyan I. P.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810161002
Subject(s) - electromigration , kinetics , crystallization , mass transport , phase (matter) , mass transfer , materials science , gallium , work (physics) , thermodynamics , range (aeronautics) , analytical chemistry (journal) , chemistry , chemical physics , chromatography , physics , composite material , metallurgy , engineering physics , organic chemistry , quantum mechanics
Growth kinetics of GaP layers in two LPEE modifications has been experimentally studied. In the first modification the vapour phase is employed as a source of crystallization. In the second case the losses of the solute during crystallization are not compensated. It has been found that growth kinetics can be treated in the frame work of the model where the growth rate is governed by mass‐transport in liquid phase. It's shown that electromigration gives the main contribution to mass‐transport at the considered experimental conditions. The quantitative estimations of the effective mass‐transport parameters for phosphorus in gallium melt in the range 800 to 1050°C have been obtained.