Etch‐ and Transmission Electron Microscope Investigations of Microdefects in (001) LEC‐GaP Substrates | Zendy

Gottschalch V. | Zendy; Wagner G. | Zendy; Pasemann M. | Zendy

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Etch‐ and Transmission Electron Microscope Investigations of Microdefects in (001) LEC‐GaP Substrates

Author(s) -

Gottschalch V.,

Wagner G.,

Pasemann M.

Publication year - 1981

Publication title -

kristall und technik

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0023-4753

DOI - 10.1002/crat.19810160908

Subject(s) - transmission electron microscopy , dislocation , etching (microfabrication) , materials science , electron microscope , etch pit density , scanning electron microscope , crystallography , doping , scanning transmission electron microscopy , range (aeronautics) , optics , chemistry , optoelectronics , composite material , nanotechnology , physics , layer (electronics)

The etch pattern of (001) and (110) LEC‐GaP doped with sulphur (N D N A in the range from 3–7 × 10 17 cm −3 ) do not only show dislocation etch pits but fine pits, so‐called “saucer pits” (S‐pits). The distribution of S‐pits, their etching behaviour and transmission electron microscope observations of etched samples indicated a clear correlation between S‐pits and microdefects (fauted‐, prismatic dislocation loops and precipitates).

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