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Etch‐ and Transmission Electron Microscope Investigations of Microdefects in (001) LEC‐GaP Substrates
Author(s) -
Gottschalch V.,
Wagner G.,
Pasemann M.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160908
Subject(s) - transmission electron microscopy , dislocation , etching (microfabrication) , materials science , electron microscope , etch pit density , scanning electron microscope , crystallography , doping , scanning transmission electron microscopy , range (aeronautics) , optics , chemistry , optoelectronics , composite material , nanotechnology , physics , layer (electronics)
The etch pattern of (001) and (110) LEC‐GaP doped with sulphur (N D N A in the range from 3–7 × 10 17 cm −3 ) do not only show dislocation etch pits but fine pits, so‐called “saucer pits” (S‐pits). The distribution of S‐pits, their etching behaviour and transmission electron microscope observations of etched samples indicated a clear correlation between S‐pits and microdefects (fauted‐, prismatic dislocation loops and precipitates).