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Growth of gallium antimonide epitaxial layers on indium arsenide substrates
Author(s) -
Pramatarova L. D.,
Tretjakov D. N.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160907
Subject(s) - epitaxy , gallium antimonide , gallium arsenide , materials science , indium arsenide , heterojunction , optoelectronics , indium antimonide , antimonide , indium , nanotechnology , layer (electronics) , superlattice
In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the epitaxial structures InAsGaSb. The optimum technological regimes for growth of heterostructures in the system InAsGaSb are found.