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Liquid phase epitaxial growth of AlGaAsGaAs heterostructures for solar energy conversion
Author(s) -
Romero R.,
Purón E.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160906
Subject(s) - heterojunction , epitaxy , materials science , liquid phase , optoelectronics , concentrator , engineering physics , phase (matter) , nanotechnology , chemistry , optics , engineering , physics , thermodynamics , organic chemistry , layer (electronics)
The operation principles of four novel Al x Ga 1− x AsGaAs heterostructure concentrator cells are discussed together with the LPE growth of such structures. Typical temperature schedules, boat design and melt composition are presented, and a detailed description of the technological procedure involved is offered.
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