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Effect of oxygen in silicon on pn‐junction characteristics
Author(s) -
Geyer L.,
Heymann G.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160816
Subject(s) - silicon , oxygen , materials science , diode , dislocation , planar , optoelectronics , crystallography , chemistry , composite material , computer science , computer graphics (images) , organic chemistry
In this paper the influence of oxygen on the characteristic of planar diodes was studied for p‐type dislocation free Czochralski silicon. Particular attention was paid to the formation of thermodonors in heat treatment at 450°C and of oxygen‐silicon precipitations, and the defects ensuing from them in heat treatments above 600°C. It was shown that there exists a connection between component properties and oxygen concentration.