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Silicon inhomogeneities in Fe‐3 wt% Si single crystals grown by floating zone melting
Author(s) -
Vanêk P.,
Kadečková S.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160809
Subject(s) - striation , zone melting , materials science , diffusion , silicon , growth rate , crystal growth , volume (thermodynamics) , crystal (programming language) , melting temperature , crystallography , mineralogy , analytical chemistry (journal) , composite material , chemistry , thermodynamics , metallurgy , geometry , physics , mathematics , chromatography , computer science , programming language
The development of radial Si inhomogeneities and striations with the growth rate increasing from 20 to 65 mm/h has been observed in Fe‐3 wt% Si single crystals grown by floating zone melting. Within a relatively small interval of growth rates (49–54 mm/h) the distinct striations extend from the periphery with enhanced Si concentration to the whole crystal volume. The solid state diffusion cannot be responsible for this phenomenon although it modifies the striation structure, especially at lower growth rates.