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Effect of electrical field on growth of gallium arsenide layers from vapour phase
Author(s) -
Lavrentieva L. G.,
Ikonnikova G. M.,
Krasilnikova L. M.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160806
Subject(s) - gallium arsenide , nucleation , materials science , substrate (aquarium) , supersaturation , growth rate , condensed matter physics , perpendicular , morphology (biology) , layer (electronics) , gallium , field (mathematics) , phase (matter) , epitaxy , optoelectronics , nanotechnology , chemistry , metallurgy , geology , physics , geometry , paleontology , oceanography , organic chemistry , mathematics , pure mathematics
The effect of electrical fields on the growth rate and morphology of gallium arsenide layers in the GaAsAsCl 3 H 2 system is investigated. The fields both parallel and perpendicular to the substrate surface are used. It is found that application of the parallel field results n increase of growth rate of (111)A face but does not change that of 2° (001). The morphology of layers grown in such a field is better than that grown without any. The application of perpendicular field results in decrease of growth rate for both crystallographic orientations, the layer morphology worthening. In both cases the effect is greater when the substrate has a negative potential. Possible mechanisms of the field influence on the growth rates of gallium arsenide layers are discussed such as: supersaturation decrease because of nucleation in vapour phase and the change in the rates of surface processes.