Epitaxial growth of silicon carbide layers by sublimation “Sandwich method” (II) structural defects and growth mechanism

Structural defects of α‐SiC epitaxial layers grown by sublimation “sandwich‐method” in vacuum at the temperatures ranging from 1600 to 2100 °C have been investigated by X‐ray topography and optical microscopy methods. It was shown, that perfect SiC layers with the homogeneous polytype structure and small dislocation density (≦ 10 2 cm −2 ) may be obtained on the substrates with any crystallographic orientation at the conditions close to quasi‐equilibrium one. The presence of impurities and silicon deficiency in the vapour phase, lead usually to the deterioration of morphological and structural perfection of SiC layers. There are the following structural defects: uncoherent polytype inclusions (mainly β‐SiC), pores, dislocations, specific stacking faults. Morphological peculiarities of the SiC epitaxial layers and possible growth mechanisms are discussed.