Structure and electrical resistance of thin scandium films (III). Study on electrical properties

The specific resistance‐thickness of ScH x (vacuum 10 −5 to 5 · 10 −6 Torr) and Sc films (vacuum 1 · 10 −8 to 3 · 10 −8 Torr) relationships have been obtained by keeping a record of a film resistance directly in the course of condensation. The results are discussed according to the theory F UCHS ‐S ONDHEIMER (ScH x , Sc) and M AYADAS ‐S HATZKES (Sc) assuming a diffuse scattering of the carriers ( P = 0) on the external surface of the films. A mean free path of the current carriers is 188 to 355 Å ( T ⋍ 300 K) for ScH x and 400 Å with grain‐boundary scattering parameter from 0.1 to 0.3 for Sc. The temperature dependence of specific resistivity of Sc films was obtained in the interval from 300 to 650 K during the annealing in vacuum 5 · 10 −9 Torr.