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Structure and electrical resistance of thin scandium films (III). Study on electrical properties
Author(s) -
Loboda V. B.,
Protsenko I. E.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160416
Subject(s) - torr , electrical resistivity and conductivity , scandium , mean free path , scattering , annealing (glass) , materials science , thin film , electrical resistance and conductance , condensed matter physics , ultra high vacuum , analytical chemistry (journal) , chemistry , composite material , optics , thermodynamics , nanotechnology , physics , metallurgy , chromatography , quantum mechanics
The specific resistance‐thickness of ScH x (vacuum 10 −5 to 5 · 10 −6 Torr) and Sc films (vacuum 1 · 10 −8 to 3 · 10 −8 Torr) relationships have been obtained by keeping a record of a film resistance directly in the course of condensation. The results are discussed according to the theory F UCHS ‐S ONDHEIMER (ScH x , Sc) and M AYADAS ‐S HATZKES (Sc) assuming a diffuse scattering of the carriers ( P = 0) on the external surface of the films. A mean free path of the current carriers is 188 to 355 Å ( T ⋍ 300 K) for ScH x and 400 Å with grain‐boundary scattering parameter from 0.1 to 0.3 for Sc. The temperature dependence of specific resistivity of Sc films was obtained in the interval from 300 to 650 K during the annealing in vacuum 5 · 10 −9 Torr.