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Growth and etching of anhydrous diglycine sulfate single crystals
Author(s) -
Pandaya G. R.,
Vyas D. D.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160307
Subject(s) - anhydrous , dislocation , etching (microfabrication) , evaporation , isotropic etching , crystallography , materials science , etch pit density , sulfate , chemistry , mineralogy , analytical chemistry (journal) , composite material , thermodynamics , metallurgy , chromatography , organic chemistry , physics , layer (electronics)
Single crystals of anhydrous diglycine sulfate are grown at constant temperature by evaporation method. The crystals are grown at various temperatures and their growth rate is determined. A chemical etchant for dislocation studies is reported. The perfection of the crystals grown at various temperatures has been studied using etching technique. It is found that the crystals contained inclusions of the mother liquid. The crystals grown below 28° are almost free of inclusions and the dislocation density is also low.