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Influence of stacking disorder on the electronic properties of layered semiconductors
Author(s) -
Maschke K.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160224
Subject(s) - stacking , condensed matter physics , anisotropy , semiconductor , materials science , wave function , electronic structure , conductivity , physics , optoelectronics , nuclear magnetic resonance , quantum mechanics
It is shown that stacking disorder in layered semiconductors leads to a localization of the electronic wavefunctions over a finite number of layers. The electronic transport across the layers is described in terms of a hopping model. The experimentally observed strong anisotropy of the de‐conductivity for low temperatures is explained as a consequence of the stacking disorder.
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