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Dislocation microwave electrical conductivity of semiconductors and electron‐dislocation spectrum
Author(s) -
Ossipyan Yu. A.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160219
Subject(s) - dislocation , semiconductor , microwave , materials science , germanium , electron , condensed matter physics , electrical resistivity and conductivity , conductivity , silicon , optoelectronics , physics , chemistry , quantum mechanics
The experimental data are presented on the microwave electrical conductivity of dislocated silicon and germanium as well as on the effect of light on the dislocation ESR signal. Based on the results obtained the new scheme of dislocation electron energy spectrum is suggested.