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Effect of generated defects during plastic deformation on electron properties of silicon
Author(s) -
Mąkosa A.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160217
Subject(s) - silicon , annealing (glass) , materials science , conductivity , photoconductivity , electron , deformation (meteorology) , condensed matter physics , recombination , electrical resistivity and conductivity , composite material , metallurgy , optoelectronics , chemistry , electrical engineering , physics , biochemistry , quantum mechanics , gene , engineering
Conductivity, photoconductivity and SDP of n‐type silicon deformed and annealed under different thermal conditions were investigated. The conductivity was found to be dependent on the temperature of deformation and additional annealing. Recombination in deformed samples is fully controlled by paramagnetic centers localized within the charge space region around the dislocations.