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Photo‐EPR of deformation‐produced defects in GaAs
Author(s) -
Wosiński T.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160216
Subject(s) - electron paramagnetic resonance , deformation (meteorology) , materials science , paramagnetism , atomic physics , crystallography , condensed matter physics , nuclear magnetic resonance , chemistry , physics , composite material
Deformation‐produced paramagnetic centres have been studied in GaAs crystals uniaxially compressed at 400° using EPR technique (X band). The effect of light with photon energies from 0.4 to 1.5 eV on the populations of the centres has been investigated. On the basis of the experimental results a model is proposed which locates the energy levels of two of the centres at E c − 1.05 eV and E v + 0.75 eV.