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EPR Studies of defects in silicon
Author(s) -
Weber E.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160215
Subject(s) - electron paramagnetic resonance , silicon , annealing (glass) , materials science , irradiation , boron , dislocation , crystallographic defect , doping , crystallography , spectral line , condensed matter physics , nuclear magnetic resonance , metallurgy , chemistry , composite material , optoelectronics , physics , nuclear physics , organic chemistry , astronomy
Electron and neutron irradiated, plastically deformed silicon has been studied by EPR. Irradiation resulted in a strong decrease of the EPR spectra produced by the deformation and in the appearance of a new EPR center at dislocations. Thermal annealing lead to a reestablishment of the formerly present dislocation spectra. As most probable explanation is proposed a change of the dislocation strain field by irradiation induced point defect iclusters. – EPR investigations of iron in boron doped Si demonstrated the pairing of all nterstitial iron in FeB pairs during room temperature storage. Thermal treatment at temperatures higher than 100°C lead to the reappearance of Fe i 0 . Therefore the time limiting factor for the annealing of FeB pairs should be the precipitation of interstitial iron.