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On the DLTS‐characterization of dislocation states in silicon
Author(s) -
Szkiełko W.,
Breitenstein O.,
Pickenhein R.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160213
Subject(s) - silicon , dislocation , characterization (materials science) , materials science , deep level transient spectroscopy , electron , trap (plumbing) , penning trap , atomic physics , molecular physics , optoelectronics , chemistry , nanotechnology , physics , nuclear physics , composite material , meteorology
Electron traps revealing nonexponential kinetics of electron capturing were detected in DLTS spectra of dislocated silicon. Their apparent capture cross‐sections are dependent on temperature and on the filling state of the trap system. A model of deformationinduced damage in silicon is proposed.