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Dislocation energy levels in deformed silicon
Author(s) -
Patel J. R.,
Kimerling L. C.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160212
Subject(s) - annealing (glass) , silicon , spectral line , slip (aerodynamics) , materials science , capacitance , dislocation , crystallography , chemistry , composite material , optoelectronics , physics , thermodynamics , electrode , astronomy
Abstract‐Energy levels in deformed silicon have been directly measured by transient junction capacitance techniques. If complex slip band formation is not suppressed, a large variety of states are observed after deformation with a prominent state at E v − 0.68 ev. After annealing at 900°C the complex defect spectra simplify to two dominant states at E v + 0.35 ev and E c − 0.38 ev. In more homogeneously deformed silicon where slip band formation is suppressed, the dominant state at E c − 0.68 ev is not observed after deformation and the spectra resembles that obtained after annealing the complex spectra at 900°C.