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Energy levels of dislocations in Ge under different conditions. Comparison between images of electron‐ and light‐beam scanning microscopy
Author(s) -
Castaldini A.,
Cavallini A.,
Gondi P.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160208
Subject(s) - dangling bond , photoconductivity , materials science , condensed matter physics , deformation (meteorology) , dislocation , electron beam induced current , cathode ray , beam (structure) , electron , thermal , microscopy , cylinder , energy spectrum , optics , scanning electron microscope , optoelectronics , physics , geometry , silicon , composite material , thermodynamics , mathematics , quantum mechanics , nuclear physics
Thermal treatment effects on Ge deformed at 350°C are consistent with reductions of the effective dangling bond densities on the dislocations. On account of difficulties in the application of known statistics the phenomena observed are briefly discussed by considering a heavily doped cylinder model for the dislocations. Observations with infrared beam induced currents emphasize the necessity of considering the effects of other defects, introduced together with dislocations during deformation, in particular for the interpretation of photoconductivity data.