Direct lifetime measurements in semiconductors with the scanning electron microscope (SEM) | Zendy

Jakubowicz A. | Zendy

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Direct lifetime measurements in semiconductors with the scanning electron microscope (SEM)

Author(s) -

Jakubowicz A.

Publication year - 1981

Publication title -

kristall und technik

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0023-4753

DOI - 10.1002/crat.19810160206

Subject(s) - electron beam induced current , scanning electron microscope , materials science , semiconductor , diode , silicon , cathode ray , electron beam induced deposition , electron microscope , optoelectronics , electron , semiconductor device , environmental scanning electron microscope , optics , scanning transmission electron microscopy , nanotechnology , physics , composite material , layer (electronics) , quantum mechanics

This paper presents a new SEM technique for direct lifetime measurements. The Electron Beam Induced Current (EBIC) has been measured after removal of the electron beam in a SEM. The experiment has been performed for a silicon diode structure. A theoretical model has been given.

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