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Direct lifetime measurements in semiconductors with the scanning electron microscope (SEM)
Author(s) -
Jakubowicz A.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160206
Subject(s) - electron beam induced current , scanning electron microscope , materials science , semiconductor , diode , silicon , cathode ray , electron beam induced deposition , electron microscope , optoelectronics , electron , semiconductor device , environmental scanning electron microscope , optics , scanning transmission electron microscopy , nanotechnology , physics , composite material , layer (electronics) , quantum mechanics
This paper presents a new SEM technique for direct lifetime measurements. The Electron Beam Induced Current (EBIC) has been measured after removal of the electron beam in a SEM. The experiment has been performed for a silicon diode structure. A theoretical model has been given.