A theoretical interpretation of the electrical behaviour of individual edge dislocations in Si as determined by combined EBIC/TEM studies | Zendy

Ourmazd A. | Zendy

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A theoretical interpretation of the electrical behaviour of individual edge dislocations in Si as determined by combined EBIC/TEM studies

Author(s) -

Ourmazd A.

Publication year - 1981

Publication title -

kristall und technik

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0023-4753

DOI - 10.1002/crat.19810160204

Subject(s) - enhanced data rates for gsm evolution , materials science , partial dislocations , condensed matter physics , interpretation (philosophy) , dislocation , carrier lifetime , crystallography , silicon , optoelectronics , physics , chemistry , composite material , computer science , artificial intelligence , programming language

The EBIC data obtained from individual edge and Frank partial dislocations i n Si, and described in other publications, are related to defect parameters, such as the capture cross‐section for minority carriers, which determine electrical recombination properties of dislocations. A two stage model for the capture of minority carriers by dislocations is developed and shown to correctly account for the temperature‐dependence of the EBIC contrast obtained from these dislocations.

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