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A theoretical interpretation of the electrical behaviour of individual edge dislocations in Si as determined by combined EBIC/TEM studies
Author(s) -
Ourmazd A.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160204
Subject(s) - enhanced data rates for gsm evolution , materials science , partial dislocations , condensed matter physics , interpretation (philosophy) , dislocation , carrier lifetime , crystallography , silicon , optoelectronics , physics , chemistry , composite material , computer science , artificial intelligence , programming language
The EBIC data obtained from individual edge and Frank partial dislocations i n Si, and described in other publications, are related to defect parameters, such as the capture cross‐section for minority carriers, which determine electrical recombination properties of dislocations. A two stage model for the capture of minority carriers by dislocations is developed and shown to correctly account for the temperature‐dependence of the EBIC contrast obtained from these dislocations.