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Connection between electrical and deformation characteristics of PbS crystals
Author(s) -
Milevskii L. S.,
Tkacheva T. M.,
Urusovskaya A. A.,
Knab G. G.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160122
Subject(s) - dislocation , deformation (meteorology) , materials science , scattering , condensed matter physics , dissolution , crystallographic defect , dislocation creep , crystallography , connection (principal bundle) , composite material , optics , geometry , chemistry , physics , mathematics
Abstract The influence of plastic deformation on temperature dependence of carrier concentration n and mobility μ in PbS crystals has been studied. Comparison of the results obtained with selective etching patterns from original and deformed crystals makes it possible to conclude that during the plastic deformation there takes place a dissolution of precipitates by passing of dislocations through them. As a results, rows of point defects appear along the path of dislocation movement which may be the cause of a change in n and μ due to deformation. A change in the electron scattering mechanism below 110 K has been discovered.