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On the quaternary NGa‐NAl‐NAs‐NGe phase diagram
Author(s) -
Geselle B.,
Herrmann F. P.,
Wagner G.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19810160103
Subject(s) - phase diagram , quaternary , gallium , diagram , epitaxy , phase (matter) , flux (metallurgy) , materials science , component (thermodynamics) , thermodynamics , chemistry , geology , physics , nanotechnology , mathematics , metallurgy , organic chemistry , paleontology , statistics , layer (electronics)
It was stated that the thickness of Ge‐doped GaAs‐ and Al x Ga 1− x As epitaxial layers, respectively, grown by equilibrium cooling from a gallium rich flux, varies with the Ge concentration in the liquid phase. This relationship was applied to calculate an quaternary Ga‐Al‐As‐Ge phase diagram by means of the law of mass action.